Compact and Polarization-Independent Variable Optical Attenuator Based on a Silicon Wire Waveguide with a Carrier Injection Structure

被引:20
|
作者
Nishi, Hidetaka [1 ]
Tsuchizawa, Tai [1 ]
Watanabe, Toshifumi [1 ]
Shinojima, Hiroyuki [1 ]
Yamada, Koji [1 ]
Itabashi, Sei-ichi [1 ]
机构
[1] NTT Corp, NTT Microsyst Integrat Labs, Kanagawa 2430198, Japan
关键词
INSULATOR PHOTONIC WIRES; MICROPHOTONICS; DIVERSITY; CIRCUIT; SI;
D O I
10.1143/JJAP.49.04DG20
中图分类号
O59 [应用物理学];
学科分类号
摘要
We developed a Si variable optical attenuator (VOA) with low-polarization-dependent loss (PDL). We designed the core dimensions to reduce PDL originating from free-carrier absorption. In the core dimensions, there is a big margin for which the PDL is less than 1 dB when attenuation is -20 dB. On the basis of calculations, we fabricated the Si VOAs and evaluated them. A fabricated Si VOA exhibited PDL of 0.2 dB due to free-carrier absorption when the attenuation was -20 dB. Moreover, we verified that the PDL is less than 1 dB in a wide range of core widths, it is tolerant to fabrication error. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页数:5
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