Compact and Polarization-Independent Variable Optical Attenuator Based on a Silicon Wire Waveguide with a Carrier Injection Structure

被引：20

作者：

Nishi, Hidetaka ^{[1
]}

Tsuchizawa, Tai ^{[1
]}

Watanabe, Toshifumi ^{[1
]}

Shinojima, Hiroyuki ^{[1
]}

Yamada, Koji ^{[1
]}

Itabashi, Sei-ichi ^{[1
]}

机构：

[1] NTT Corp, NTT Microsyst Integrat Labs, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

INSULATOR PHOTONIC WIRES; MICROPHOTONICS; DIVERSITY; CIRCUIT; SI;

D O I：

10.1143/JJAP.49.04DG20

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a Si variable optical attenuator (VOA) with low-polarization-dependent loss (PDL). We designed the core dimensions to reduce PDL originating from free-carrier absorption. In the core dimensions, there is a big margin for which the PDL is less than 1 dB when attenuation is -20 dB. On the basis of calculations, we fabricated the Si VOAs and evaluated them. A fabricated Si VOA exhibited PDL of 0.2 dB due to free-carrier absorption when the attenuation was -20 dB. Moreover, we verified that the PDL is less than 1 dB in a wide range of core widths, it is tolerant to fabrication error. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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