Fano line fitting of Raman spectra on {100} facet of boron-doped CVD diamond

被引：0
|
作者：
Ushizawa, K [1 ]
Gamo, MN [1 ]
Xiao, CY [1 ]
Watanabe, K [1 ]
Sato, Y [1 ]
Ando, T [1 ]
机构：
[1] Natl Inst Res Inorgan Mat, CREST, JST, Tsukuba, Ibaraki 3050044, Japan
来源：
DIAMOND MATERIALS VI | 2000年 / 99卷 / 32期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have attempted to predict a certain amount of boron concentration in boron-doped CVD diamond single crystals by Raman spectroscopy. The asymmetrical feature was observed on one-phonon Raman line shape of B-doped diamond. The feature is depended on the boron concentration. We performed Fano line fitting for one-phonon line. Fano parameters represented the asymmetry of one-phonon line. The relation between Fano parameters and boron concentrations obtained in this study can estimate a certain amount of boron concentration of B-doped diamond crystals.
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页码：247 / 251
页数：5
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