Achievements and challenges for the electrical performance of MOSFET's with high-k gate dielectrics

被引：0

作者：

Groeseneken, G ^{[1
]}

Pantisano, L ^{[1
]}

Ragnarsson, LÅ ^{[1
]}

Degraeve, R ^{[1
]}

Houssa, M ^{[1
]}

Kauerauf, T ^{[1
]}

Roussel, P ^{[1
]}

De Gendt, S ^{[1
]}

Heyns, M ^{[1
]}

机构：

[1] IMEC, Louvain, Belgium

来源：

IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the electrical performance of high-k dielectrics for future technology generations is discussed. Despite major achievements in the development of high-k dielectrics, such as the gate leakage reduction - which is the main motivation why high-k dielectrics are being introduced - and the successful integration in small MOSFET devices, some major problems remain to be solved. These problems are threshold voltage control and stability, mobility and drive current performance and reliability problems. Significant progress in the performance of these layers was made by the use of engineered interfaces and optimized high-k stacks.

引用

页码：147 / 155

页数：9

共 28 条

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[3]

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[4]

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