Microstructure and ferroelectric properties of dysprosium-doped bismuth titanate thin films

被引：21
作者：
Cheng, Chuanpin
Tang, Minghua [1 ]
Ye, Zhi
Zhou, Yichun
Zheng, Xuejun
Hu, Zenshun
Hu, Heping
机构：
[1] Xiangtan Univ, Fac Mat Sci & Photoelect Phys, Xiangtan 411105, Peoples R China
[2] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China
来源：
MATERIALS LETTERS | 2007年 / 61卷 / 19-20期
基金：
中国国家自然科学基金;
关键词：
sol-gel; substitution; ferroelectric thin films;
D O I：
10.1016/j.matlet.2007.01.033
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi4Ti3O12 (BIT) ferroelectric thin films with Dy3+ substitution (Bi4-xDyxTi3O12, x=0, 0.2, 0.4, 0.6, 0.8 and 1.0, respectively) were grown on Pt(111)/Ti/SiO2/Si(100) substrates using sol-gel method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that after annealing at 710 degrees C for 10 min, all Bi4-xDyxTi3O12 films became polycrystallites. Among all the deposited thin films, the Bi3.4Dy0.6Ti3O12 specimen exhibits improved ferroelectric properties with the largest average remanent polarization (2Pr) of 53.06 mu C/cm(2) under applied field of 400 kV/cm and fatigue free characteristics (16% loss of 2Pr after 1.5 x 10(10) switching cycles), indicating that it is suitable for non-volatile ferroelectric random access memories applications. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：4117 / 4120
页数：4
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共 13 条
  • [1] Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition
    Aratani, M
    Oikawa, T
    Ozeki, T
    Funakubo, H
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (07) : 1000 - 1002
  • [2] Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
    Chon, U
    Yi, GC
    Jang, HM
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (05) : 658 - 660
  • [3] Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations
    Chon, U
    Kim, KB
    Jang, HM
    Yi, GC
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (19) : 3137 - 3139
  • [4] Thickness-dependent phase evolution of polycrystalline Pb(Zr0.35Ti0.65)O3 thin films
    Kelman, MB
    Schloss, LF
    McIntyre, PC
    Hendrix, BC
    Bilodeau, SM
    Roeder, JF
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1258 - 1260
  • [5] The effect of Eu substitution on the ferroelectric properties of Bi4Ti3O12 thin films prepared by metal-organic decomposition
    Kim, KT
    Kim, CI
    Kang, DH
    Shim, IW
    [J]. THIN SOLID FILMS, 2002, 422 (1-2) : 230 - 234
  • [6] Ferroelectric (Bi,Dy)4Ti3O12 thin films deposited on Pt(111)/Ti/SiO2/Si and p-type Si(100) substrates
    Kim, SS
    Song, JS
    Kwon, SC
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 271 (1-2) : 90 - 98
  • [7] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
    Kojima, T
    Sakai, T
    Watanabe, T
    Funakubo, H
    Saito, K
    Osada, M
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2746 - 2748
  • [8] Large ferroelectric response in Bi4-xNdxTi3O12 films prepared by sol-gel process
    Melgarejo, RE
    Tomar, MS
    Bhaskar, S
    Dobal, PS
    Katiyar, RS
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (14) : 2611 - 2613
  • [9] Effect of cerium concentration on the structural and ferroelectric properties of Bi4-xCexTi3O12 thin films for ferroelectric random access memories
    Oh, YN
    Yoon, SG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1029 - 1031
  • [10] Lanthanum-substituted bismuth titanate for use in non-volatile memories
    Park, BH
    Kang, BS
    Bu, SD
    Noh, TW
    Lee, J
    Jo, W
    [J]. NATURE, 1999, 401 (6754) : 682 - 684
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