Energy band alignment of PbTe/CdTe(111) interface determined by ultraviolet photoelectron spectra using synchrotron radiation

被引：8

作者：

Cai Chun-Feng ^{[1
]}

Wu Hui-Zhen ^{[1
]}

Si Jian-Xiao ^{[2
]}

Jin Shu-Qiang ^{[1
]}

Zhang Wen-Hua ^{[3
]}

Xu Yang ^{[3
]}

Zhu Jun-Fa ^{[3
]}

机构：

[1] Zhejiang Univ, Dept Phys, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Normal Univ, Coll Phys & Math, Jinhua 321004, Peoples R China

[3] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 07期

基金：

中国国家自然科学基金;

关键词：

valence band offset; ultraviolet photoelectron spectra; synchrotron radiation; RAY PHOTOEMISSION SPECTRA; PBTE; CDTE;

D O I：

10.1088/1674-1056/19/7/077301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The energy band structure with type-I alignment at the PbTe/CdTe(111) heterojunction interface is determined by the ultraviolet photoelectron spectrum using synchrotron radiation. The valence band and conduction band offsets are obtained to be 0.09 +/- 0.12 and 1.19 +/- 0.12 eV, respectively. These results are in agreement with theoretically predicted ones. The accurate determination of the valence band and conduction band offsets is useful for the fundamental understanding of the mid-infrared light emission from the PbTe/CdTe heterostructures and its application in devices.

引用

页数：5

共 18 条

[1] Size control and midinfrared emission of epitaxial PbTe/CdTe quantum dot precipitates grown by molecular beam epitaxy [J].

Groiss, H. ;

Kaufmann, E. ;

Springholz, G. ;

Schwarzl, T. ;

Hesser, G. ;

Schaeffler, F. ;

Heiss, W. ;

Koike, K. ;

Itakura, T. ;

Hotei, T. ;

Yano, M. ;

Wojtowicz, T. .

APPLIED PHYSICS LETTERS, 2007, 91 (22)

[2] Large Rashba splitting in highly asymmetric CdTe/PbTe/PbSrTe quantum well structures [J].

Jin, Shuqiang ;

Wu, Huizhen ;

Xu, Tianning .

APPLIED PHYSICS LETTERS, 2009, 95 (13)

[3]

KHOKHLOV D, 2003, LEAD CHALCOGENIDES P, P5

[4] Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy [J].

Koike, Kazuto ;

Harada, Hisashi ;

Itakura, Tomoyuki ;

Yano, Mitsuaki ;

Heiss, Wolfgang ;

Groiss, Heiko ;

Kaufmann, Erich ;

Hesser, Gunter ;

Schaeffler, Friedrich .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 (722-725) :722-725

[5] Photoluminescence properties of Pb1-xSnxTe/CdTe quantum wells grown on (100)-oriented GaAs substrates by molecular beam epitaxy [J].

Koike, Kazuto ;

Hotei, Takanori ;

Kawaguchi, Ryou ;

Yano, Mitsuaki .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :2102-2105

[6] CDTE-HGTE (1BAR1BAR1BAR) HETEROJUNCTION VALENCE-BAND DISCONTINUITY - A COMMON-ANION-RULE CONTRADICTION [J].

KOWALCZYK, SP ;

CHEUNG, JT ;

KRAUT, EA ;

GRANT, RW .

PHYSICAL REVIEW LETTERS, 1986, 56 (15) :1605-1608

[7] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J].

KRAUT, EA ;

GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1620-1623

[8] Electronic-structure calculations for polar lattice-structure-mismatched interfaces: PbTe/CdTe(100) [J].

Leitsmann, R. ;

Bechstedt, F. .

PHYSICAL REVIEW B, 2007, 76 (12)

[9] HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTRA OF PBS, PBSE, AND PBTE VALENCE BANDS [J].

MCFEELY, FR ;

KOWALCZYK, S ;

LEY, L ;

POLLAK, RA ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1973, 7 (12) :5228-5237

[10] Temperature-dependent midinfrared photoluminescence of epitaxial PbTe/CdTe quantum dots and calculation of the corresponding transition energy [J].

Schwarzl, T. ;

Kaufmann, E. ;

Springholz, G. ;

Koike, K. ;

Hotei, T. ;

Yano, M. ;

Heiss, W. .

PHYSICAL REVIEW B, 2008, 78 (16)

← 1 2 →