Optical properties of Wurtzite Zn1-xCdxO films grown by remote-plasma-enhanced metalorganic chemical vapor deposition

被引：15

作者：

Ohashi, Toshiya ^{[1
]}

Yamamoto, Kenji ^{[1
]}

Nakamura, Atsushi ^{[1
]}

Aoki, Toru ^{[1
]}

Temmyo, Jiro ^{[1
]}

机构：

[1] Shizuoka Univ, Res Inst Elect, Hamamatsu, Shizuoka 432, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

Zn1-xCdxO; remote-plasma-enhanced MOCVD; RF power; band gap; refractive index;

D O I：

10.1143/JJAP.46.2516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn1-xCdxO films were grown on a-plane (11 (2) over bar0) sapphires by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The growth temperature, the group-II flow ratio R, and RF power are important parameters for the growth of Zn1-xCdxO films by RPE-MOCVD. R is defined as the molar function of [DMCd/(DEZn + DMCd)]. We discuss typical growth features associated with RPE-MOCVD and the refractive indices of wurtzite-type films. The band gap energy of Zn1-xCdxO grown at 350 degrees C can be controlled from 3.3 down to 1.8 eV. The refractive index is measured by ellipsometry at 1.96 eV and is found to vary from 2.07 to 2.78.

引用

页码：2516 / 2518

页数：3

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