Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

被引:10
作者
Tian, Kangkai [1 ,2 ]
Chu, Chunshuang [1 ,2 ]
Che, Jiamang [1 ,2 ]
Shao, Hua [1 ,2 ]
Kou, Jianquan [1 ,2 ]
Zhang, Yonghui [1 ,2 ]
Zhou, Xingye [3 ]
Feng, Zhihong [3 ]
Wei, Tongbo [4 ]
Zhang, Zi-Hui [1 ,2 ]
机构
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Inst Micronano Photoelectron & Electromagnet Tech, 5340 Xiping Rd, Tianjin 300401, Peoples R China
[2] Key Lab Elect Mat & Devices Tianjin, 5340 Xiping Rd, Tianjin 300401, Peoples R China
[3] Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China
基金
北京市自然科学基金;
关键词
BAND PARAMETERS; QUANTUM-WELL; EFFICIENCY;
D O I
10.1063/1.5127916
中图分类号
O59 [应用物理学];
学科分类号
摘要
Al-rich AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) have a low light extraction efficiency, especially when the emission wavelength is shorter than 280 nm, and this is partially because of the dominant transverse-magnetic polarized light. Our results show that the transverse-electric (TE) polarized light can be obtained even if the emission wavelength becomes even shorter by reducing the quantum well thickness. The ultrathin quantum well enables the enhanced TE-polarized emission that arises from the redistributed subbands for holes. On the contrary to the common belief, we observe a blueshift for the emission wavelength when the AlN composition in the quantum barrier increases. The internal quantum efficiency (IQE) for DUV LEDs with ultrathin quantum wells is no longer determined by the quantum-confined Stark effect, while quantum barrier with high AlN composition is vitally important to improve the electron injection efficiency and thus enhance the IQE.
引用
收藏
页数:7
相关论文
共 35 条
  • [1] [Anonymous], 2017, ARCH BRONCONEUMOL, DOI DOI 10.1109/JQE.2016.2643289
  • [2] Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
    Bhattacharyya, A.
    Moustakas, T. D.
    Zhou, Lin
    Smith, David. J.
    Hug, W.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (18)
  • [3] Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes
    Chiaria, Simone
    Furno, Enrico
    Goano, Michele
    Bellotti, Enrico
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) : 60 - 70
  • [4] Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions
    Chuang, SL
    Chang, CS
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (12) : 1657 - 1659
  • [5] k center dot p method for strained wurtzite semiconductors
    Chuang, SL
    Chang, CS
    [J]. PHYSICAL REVIEW B, 1996, 54 (04): : 2491 - 2504
  • [6] A band-structure model of strained quantum-well wurtzite semiconductors
    Chuang, SL
    Chang, CS
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (03) : 252 - 263
  • [7] 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
    Dong, Peng
    Yan, Jianchang
    Wang, Junxi
    Zhang, Yun
    Geng, Chong
    Wei, Tongbo
    Cong, Peipei
    Zhang, Yiyun
    Zeng, Jianping
    Tian, Yingdong
    Sun, Lili
    Yan, Qingfeng
    Li, Jinmin
    Fan, Shunfei
    Qin, Zhixin
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (24)
  • [8] Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films
    Fu, D. Y.
    Zhang, R.
    Wang, B. G.
    Zhang, Z.
    Liu, B.
    Xie, Z. L.
    Xiu, X. Q.
    Lu, H.
    Zheng, Y. D.
    Edwards, G.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (19)
  • [9] Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
    Hirayama, Hideki
    Maeda, Noritoshi
    Fujikawa, Sachie
    Toyoda, Shiro
    Kamata, Norihiko
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)
  • [10] Huang D., 2013, SEMICONDUCTOR OPTOEL, V2nd