Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states

被引：75

作者：

Monch, W ^{[1
]}

机构：

[1] Gerhard Mercator Univ Duisburg, Festkorperphys Lab, D-47048 Duisburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 15期

关键词：

D O I：

10.1063/1.121220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Many metal chalcogenides are layered semiconductors. They consist of chalcogen-metal-chalcogen layers that are themselves bound by van der Waals forces. Hence, heterostructures involving layered compounds are abrupt and strain-free. Experimental valence-band offsets of heterostructures between GaSe, InSe, SnS2, SnSe2, MoS2, MoTe2, WSe2, and CuInSe2 and between some of these compounds and ZnSe, CdS, and CdTe as well as barrier heights of Au contacts on GaSe, InSe, MoS2, MoTe2, WSe2, ZnSe, CdS, and CdTe are analyzed. The valence-band discontinuities of the heterostructures and the barrier heights of the Schottky contact compounds are consistently described by the continuum of interface-induced gap states as the primary mechanism that governs the band lineup at semiconductor interfaces. (C) 1998 American Institute of Physics.

引用

页码：1899 / 1901

页数：3

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