Analyses of the intermediate energy levels in ZnTe:O alloys

被引：29

作者：

Tablero, C. ^{[1
]}

Marti, A. ^{[1
]}

Luque, A. ^{[1
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

关键词：

ab initio calculations; deep levels; energy gap; exchange interactions (electron); II-VI semiconductors; oxygen; semiconductor doping; wide band gap semiconductors; zinc compounds; PHOTOLUMINESCENCE; OXYGEN; MODEL;

D O I：

10.1063/1.3370356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The isoelectronic doping of ZnTe with oxygen leads to deep levels on which carriers recombine radiatively via intermediate band states. The electronic density and the impurity-host character of these deep levels are analyzed using first principles, for the wurtzite and zinc-blende structures, different oxygen concentration, and different exchange-correlation approach.

引用

页数：3

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