Core-level photoelectron study of indium chains on Si(111) at 10 K

被引：1

作者：

Aristov, V. Yu. ^{[2
,3
]}

Molodtsova, O. V. ^{[2
]}

Vyalikh, D. V. ^{[4
]}

Knupfer, M. ^{[2
]}

De Padova, P. ^{[5
]}

Le Lay, G. ^{[1
,6
]}

机构：

[1] CINaM CNRS, Case 913, F-13288 Marseille 09, France

[2] IFW Dresden, D-01069 Dresden, Germany

[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Distr, Russia

[4] Tech Univ Dresden, Inst Solid State Phys, D-01069 Dresden, Germany

[5] CNR ISM, I-00133 Rome, Italy

[6] Univ Aix Marseille 1, UFR Sci Mat, Marseille, France

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2010年 / 177卷 / 01期

关键词：

1D systems; Indium; Silicon(111); Core-level spectroscopy; PHASE-TRANSITION; SURFACE; DIFFRACTION;

D O I：

10.1016/j.elspec.2009.09.002

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

High-resolution core-level data from the prototypical In/Si(1 1 1) system have been acquired at 10 K. An asymmetric tail in the In 4d spectra reveals a metallic character of the low temperature Si(1 1 1)8 x 2 phase confined to the inner indium rows. The decoupling of the one-dimensional inner indium chains from any metallic environment at similar to 10 K suggests a possible Luttinger liquid behavior. At room temperature essentially a broadening of the spectral features is noticed, which appears compatible with a fluctuation scenario. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4

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