Work function change caused by alkali ion sputtering of a sample surface

被引：14

作者：

Kudriavtsev, Y ^{[1
]}

Asomoza, R ^{[1
]}

机构：

[1] IPN, Ctr Invest & Estudios Avanzados, SEES, Dep Ingn Elect, Mexico City 07300 14, DF, Mexico

来源：

APPLIED SURFACE SCIENCE | 2000年 / 167卷 / 1-2期

关键词：

ion sputtering; ion implantation; work function;

D O I：

10.1016/S0169-4332(00)00381-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The steady state ion sputtering of a solid surface was studied. Based on a simple model, the surface concentration of ions implanted during sputtering was calculated in the case of cesium ion sputtering of silicon. The corresponding work function shift was calculated using the model developed. (C) 2000 Published by Elsevier Science B.V.

引用

页码：12 / 17

页数：6

共 18 条

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