Er/Yb doped porous silicon - A novel white light source

被引：58

作者：

Luo, L

Zhang, XX

Li, KF

Cheah, KW ^{[1
]}

Shi, HX

Wong, WK

Gong, ML

机构：

[1] Hong Kong Baptist Univ, Dept Phys, Ctr Adv Luminescence Mat, Kowloon, Hong Kong, Peoples R China

[2] Guangdong Univ Technol, Dept Appl Phys, Guangzhou 510090, Peoples R China

[3] Hong Kong Baptist Univ, Dept Chem, Ctr Adv Luminescence Mat, Kowloon, Hong Kong, Peoples R China

[4] Sun Yat Sen Univ, Sch Chem & Chem Engn, Guangzhou 510275, Peoples R China

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 18期

关键词：

D O I：

10.1002/adma.200306609

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A constant voltage electrochemical doping method, is used in order to successfully introduce elemental erbium, Er and ytterbium, Yb into the pores of porous silicon. Er/Yb doped porous silicon emits efficiently from the UV to near-IR when excited with a 980 nm line laser (see Figure).

引用

页码：1664 / +

页数：5

共 15 条

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