193nm photoresists at 130nm node: Which lithographic performances for which chemical platform?

193nn photoresists on the market today can be classified into three different chemical platforms. The first platform involves acrylate type polymers, the second one cycloolefin-maleic anhydride (COMA) type polymers, and the third one a mixture of both. In this paper, we present a complete review of the lithographic performances at the 130nm node, for 10 different commercially photoresists, coming from the three different chemical platforms. The results include various criteria: linear resolution, depth of focus, dose latitude, proximity bias and edge roughness for 130nn lines (various pitches from isolated to 1:1 dense), depth of focus for 100nn isolated lines, depth of focus and dose latitude for 140nm contact holes, PEB temperature sensitivity (CD variation vs FEB temperature), thermal stability (post development bake stability), exposure - PEB delay stability. Also, pattern collapse tendency and etch selectivity to both polysilicon and SiO2 are presented. We then correlate some of these results to the thermal properties (glass transition and decomposition temperatures) of the materials. We finally conclude about the pros and cons of each chemical platform for achieving the 130nn node requirements.