1W < 0.9dB IL DC-20GHz T/R Switch Design with 45nm SOI Process

被引：0
|
作者：
Li, Chaojiang [1 ]
Freeman, Greg [1 ]
Boenke, Myra [1 ]
Cahoon, Ned [1 ]
Kodak, Umut [2 ]
Rebeiz, Gabriel [2 ]
机构：
[1] GLOBALFOUNDRIES, Essex Jct, VT 05452 USA
[2] Univ Calif San Diego, La Jolla, CA 92093 USA
来源：
2017 IEEE 17TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2017年
关键词：
SPDT; Switch; SOI; X band; Ku Band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we discuss a DC-20GHz single-pole double-throw (SPDT) transmit/receive switch (T/R switch) design in 45nm SOI process. This circuit is dedicated to fully integrated CMOS RF front end modules for X/Ku band satellite communication applications. The switch exhibits a measured insertion loss of 0.59dB, return loss of 23dB, and isolation of 17dB at 14GHz. The input 1dB compression point is 31.5dBm, and one-tone IIP3 is 63.8dBm. This state of the art performance is comparable or even better than existing commercial GaAs SPDT in this frequency range. The core area is only 90um x 100um, which is very helpful for low cost large element phase array designs.
引用
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页码：57 / 59
页数：3
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