A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in fully depleted SOI MOSFET

被引:27
作者
Lun, Z [1 ]
Ang, DS [1 ]
Ling, CH [1 ]
机构
[1] Natl Univ Singapore, Fac Engn, Singapore 119260, Singapore
关键词
double-gate operation; fully depleted SOI MOSFET; subthreshold swing; back interface trap density;
D O I
10.1109/55.852967
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel experimental technique, based on the double-gate operation, is proposed for extracting the back interface trap density of the fully depleted SOI MOSFET. The method relies on simple current-voltage measurements, requires no prior knowledge of the silicon film thickness variations of the accumulation layer, by maintaining both interfaces in depletion. The sensitivity of the technique is shown to depend on the ratio of the interface trap and oxide capacitances of the buried oxide thickness. The technique has been successfully used to monitor the increase in back interface trap density following Fowler-Nordheim stress.
引用
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页码:411 / 413
页数:3
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