High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies

被引：0

作者：

Derguti, Edon ^{[1
,2
]}

Ture, Erdin ^{[1
]}

Krause, Sebastian ^{[1
]}

Schwantuschke, Dirk ^{[1
]}

Quay, Ruediger ^{[1
]}

Ambacher, Oliver ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Freiburg, Germany

[2] Albert Ludwigs Univ, Freiburg, Germany

来源：

2018 48TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2018年

关键词：

Doherty amplifier; GaN HEMT; packaged powerbar; power amplifier (PA); WIDE-BAND; EFFICIENCY; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the design and realization of an asymmetrical three-way (1:1:1) GaN Doherty power amplifier (DPA) operating at a center frequency of 5.4 GHz is presented. The DPA is constructed from three packaged power bars, each consisting of four GaN HEMT cells (8 fingers, 300 mu m unit gate width) in 0.25 mu m gate length. Performance of the realized DPA prototype is analyzed under pulsed-RF excitation (20 mu s pulse width, 10 % duty cycle) at 40 V DC drain supply voltage. The measurement results yield 48.5 dBm maximum output power, with a maximum PAE of 46 %. At 6 dB output power back-off (OPBO) the DPA demonstrates 40 % PAE whereas 35 % PAE is achieved at 9 dB OPBO.

引用

页码：1233 / 1236

页数：4