Wide-band duplexer based on electrical balance of hybrid transformer having two notches

被引:3
作者
Park, J. [1 ]
Jin, S. [2 ]
Moon, K. [3 ]
Kim, B. [1 ,3 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Div IT Convergence, Pohang 790784, Gyeongbuk, South Korea
[2] Qualcomm Technol Inc, QCT RFIC Design, 5775 Morehouse Dr, San Diego, CA USA
[3] Pohang Univ Sci & Technol POSTECH, Engn Dept Elect Engn, Pohang 790784, Gyeongbuk, South Korea
关键词
Broadband operation - Compact size - Front end modules - GaAs pseudomorphic high electron mobility transistors (pHEMT) - Receivers (Rx) - Return loss - Transmitters (Tx) - Wide-band;
D O I
10.1049/el.2016.1275
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A tunable transformer duplexer having two notches has been proposed and demonstrated for a broadband operation. The suggested duplexer using GaAs pseudomorphic high electron mobility transistor (pHEMT) technology shows isolations of over 55 dB at the transmitter (Tx) band and over 45 dB at the receiver (Rx) band across 145 MHz bandwidth. The insertion losses are -3.35 and -3.52 dB for the Tx band and the Rx band, respectively, for 500 MHz bandwidth. At all ports, the return losses are under -15 dB. The duplexer is tunable simply by tuning the four components. Although this broadband duplexer has a very compact size with tunable capability, its performance is comparable with the front end module integrated duplexer.
引用
收藏
页码:1151 / 1152
页数:2
相关论文
共 6 条
  • [1] Abdelhalem S., 2012, P IEEE RFIC JUN, P237
  • [2] ABDELHALEM SH, 2013, T MICROW THEORY TECH, V61, P1316, DOI DOI 10.1109/TMTT.2013.2243748
  • [3] [Anonymous], 2013, 6 JOINT IFIP WIR MOB
  • [4] Mikhemar M., 2009, ISSCC FEB, P386
  • [5] An On-Chip Wideband and Low-Loss Duplexer for 3G/4G CMOS Radios
    Mikhemar, Mohyee
    Darabi, Hooman
    Abidi, Asad
    [J]. 2010 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2010, : 129 - +
  • [6] SARTORI EF, 1968, TRANS PARTS MAT PACK, V4, P59