The influence of foreign atoms on the early stages of SiC growth on (111)Si

被引：21

作者：

Pezoldt, J

Masri, P

Laridjani, MR

Averous, M

Wöhner, T

Schaefer, JA

Stauden, T

Ecke, G

Pieterwas, R

Spiess, L

机构：

[1] TU Ilmenau, Inst Festkorperelektr, DE-98684 Ilmenau, Germany

[2] Univ Montpellier 2, Etud Semicond Grp, CNRS, CC074,UMR 5650, FR-34095 Montpellier 5, France

[3] TU Ilmenau, Inst Phys, DE-98684 Ilmenau, Germany

[4] TU Ilmenau, Inst Werkstofftech, DE-98684 Ilmenau, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

germanium; heteroepitaxy; heterointerface control; molecular beam epitaxy;

D O I：

10.4028/www.scientific.net/MSF.338-342.289

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

3C-SiC was grown on (111)Si by solid source molecular beam epitaxy. The use of Ge during the carbonization leads to an improvement of the crystal quality of the grown layers. Electron spectroscopy revealed that Ge is incorporated mainly into the heterointerface. The observed effects are discussed in relation to different theories.

引用

页码：289 / 292

页数：4

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