Changes in the electronic properties of Si nanocrystals as a function of particle size

被引：386

作者：

van Buuren, T ^{[1
]}

Dinh, LN ^{[1
]}

Chase, LL ^{[1
]}

Siekhaus, WJ ^{[1
]}

Terminello, LJ ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Dept Chem & Mat Sci, Livermore, CA 94550 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.80.3803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X-ray absorption and photoemission spectra have been used to measure the band edges of silicon nanocrystals with average diameters ranging from 1 to 5 nm. We compare the experimentally measured band edges to recent electronic structure calculations and find that the experimentally measured band gap is smaller than that predicted by theory.

引用

页码：3803 / 3806

页数：4

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