Transport through molecular junctions with a nonequilibrium phonon population

被引:23
作者
Entin-Wohlman, O. [1 ,2 ,3 ,5 ]
Imry, Y. [4 ]
Aharony, A. [1 ,2 ,5 ]
机构
[1] Ben Gurion Univ Negev, Dept Phys, IL-84105 Beer Sheva, Israel
[2] Ben Gurion Univ Negev, Ilse Katz Ctr Meso & Nanoscale Sci & Technol, IL-84105 Beer Sheva, Israel
[3] Weizmann Inst Sci, Albert Einstein Minerva Ctr Theoret Phys, IL-76100 Rehovot, Israel
[4] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
[5] Tel Aviv Univ, IL-69978 Tel Aviv, Israel
基金
以色列科学基金会;
关键词
CONDUCTANCE; TRANSISTOR;
D O I
10.1103/PhysRevB.81.113408
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The calculation of the nonlinear conductance of a single-molecule junction is revisited. The self-energy on the junction resulting from the electron-phonon interaction has at low-temperatures logarithmic singularities (in the real part) and discontinuities (in the imaginary one) at the frequencies corresponding to the opening of the inelastic channels. These singularities generate discontinuities and logarithmic divergences (as a function of the bias voltage) in the low-temperature differential conductance around the inelastic thresholds. The self-energy also depends on the population of the vibrational modes. The case of a vibrating free junction (not coupled to a thermal bath), where the phonon population is determined by the bias voltage is examined. We compare the resulting zero-temperature differential conductance with the one obtained for equilibrated phonons and find that the difference is larger, the larger is the bare transmission of the junction and the product of the electron dwell time on the junction with the phonon frequency.
引用
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页数:4
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