A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) NTOSFETs

被引：8

作者：

Chiang, T. K. ^{[1
]}

机构：

[1] So Taiwan Univ Technol, Dept Elect Engn, Yung Kang, Tainan, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 2-3期

关键词：

D O I：

10.1016/j.microrel.2006.05.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on two-dimensional (2D) Poisson potential solution, a compact, analytical model for threshold voltage in cylindrical, fullydepleted, surrounding-gate (SG) MOSFETs is successfully derived. The minimum surface potential phi(min,surface) is used to develop the threshold voltage model. Besides decreasing the characteristic factor, both the thin silicon body and gate oxide can reduce the threshold voltage roll-off simultaneously. It is also found that the threshold voltage shift is dependent on the scaling factor of lambda L-1. The high scaling factor is preferred to alleviate threshold voltage degradation. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：379 / 383

页数：5

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