Electron cyclotron resonance plasma etching of GaSb-based alloys

被引：1

作者：

Ahmad, RU ^{[1
]}

Nagy, G

Osgood, RM

Turner, GW

Manfra, MJ

Chludzinski, JW

机构：

[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA

[2] MIT, Lincoln Lab, Lexington, MA 02173 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.1289058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron cyclotron resonance plasma etching is used to fabricate submicrometer-scale GaInAsSb/AlGaAsSb multiple-quantum-well structures. Smooth and anisotropic features at low substrate bias were obtained under appropriate conditions. The etch quality was investigated with photoluminescence spectroscopy; luminescence data from the etched features agree well with a model that assumes a low-damage etching process. (C) 2000 American Institute of Physics. [S0003-6951(00)03633-0].

引用

页码：1008 / 1010

页数：3

共 50 条

[1] ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION AND ETCHING OF SILICON-NITRIDE ON GASB FOR OPTOELECTRONIC APPLICATIONS
BONNOT, R
GOUSKOV, A
BOUGNOT, G
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 369 - 373
[2] Electron cyclotron resonance oxygen plasma etching of diamond
Bernard, M
Deneuville, A
Ortega, L
Ayadi, K
Muret, P
DIAMOND AND RELATED MATERIALS, 2004, 13 (02) : 287 - 291
[3] Ultradeep electron cyclotron resonance plasma etching of GaN
Harrison, Sara E.
Voss, Lars F.
Torres, Andrea M.
Frye, Clint D.
Shao, Qinghui
Nikolic, Rebecca J.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (06):
[4] Silicon trench etching by Electron Cyclotron Resonance plasma
Enta Y.
Furuse M.
Takata K.
Tsutsumi T.
Journal of the Vacuum Society of Japan, 2010, 53 (07) : 435 - 440
[5] TUNGSTEN ETCHING USING AN ELECTRON-CYCLOTRON-RESONANCE PLASMA
MARUYAMA, T
FUJIWARA, N
SHIOZAWA, K
YONEDA, M
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 810 - 814
[6] Characterization of electron cyclotron resonance source plasma for etching and deposition
Angra, SK
Kumar, P
Banerjie, PC
Bajpai, RP
THIN SOLID FILMS, 1997, 304 (1-2) : 294 - 298
[7] Effect of electric field on electron cyclotron resonance plasma etching
Nishioka, K
Fujiwara, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (11): : 5998 - 6002
[8] KINETICS OF PHOTORESIST ETCHING IN AN ELECTRON-CYCLOTRON RESONANCE PLASMA
CARL, DA
HESS, DW
LIEBERMAN, MA
JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1859 - 1865
[9] CRYOGENIC ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING
WHANG, KW
LEE, SH
LEE, HJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1307 - 1312
[10] ELECTRON-CYCLOTRON RESONANCE MICROWAVE-PLASMA ETCHING
MEJIA, SR
CHAU, T
MCLEOD, RD
KAO, KC
CARD, HC
CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) : 856 - 858

← 1 2 3 4 5 →