Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

被引：38

作者：

Du, G. X. ^{[1
]}

Wang, S. G. ^{[1
,2
]}

Ma, Q. L. ^{[1
]}

Wang, Yan ^{[1
]}

Ward, R. C. C. ^{[2
]}

Zhang, X. -G. ^{[3
,4
]}

Wang, C. ^{[5
]}

Kohn, A. ^{[5
]}

Han, X. F. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China

[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

[3] Oak Ridge Natl Lab, Div Math, Oak Ridge, TN 37831 USA

[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci & Comp Sci, Oak Ridge, TN 37831 USA

[5] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

ROOM-TEMPERATURE; MAGNETORESISTANCE; TRANSMISSION; STATES;

D O I：

10.1103/PhysRevB.81.064438

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction is measured and compared to first-principles calculation of the tunneling conductance. The measured dynamic conductance (dI/dV) in the parallel configuration shows distinct asymmetric features as a function of the bias voltage. The peaks are independent of barrier thickness, magnetic field, and temperature. With the help of the first-principles calculations, positive and negative bias spectra can be related to different types of Fe/MgO interfaces.

引用

页数：4

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