Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition

被引：14

作者：

Cervenka, J. ^{[1
]}

Ledinsky, M. ^{[1
]}

Stuchlikova, H. ^{[1
]}

Stuchlik, J. ^{[1
]}

Vyborny, Z. ^{[1
]}

Holovsky, J. ^{[1
]}

Hruska, K. ^{[1
]}

Fejfar, A. ^{[1
]}

Kocka, J. ^{[1
]}

机构：

[1] Acad Sci Czech Republic, Inst Phys, Vvi, Prague 16253 6, Czech Republic

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 1-2期

关键词：

SILICON NANOWIRES; RAMAN-SPECTROSCOPY; SOLAR-CELLS; ARRAYS; DEVICES;

D O I：

10.1002/pssr.200903348

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conical silicon nanowires have been grown by gold nanoparticle catalyzed plasma-enhanced chemical vapor deposition. This method produces Si nanowires with a very fast growth rate (1 mu m/min) and unique sharpness (<10 nm). Raman spectroscopy has proved the presence of both crystalline and amorphous Si in the grown Si nanowire layer. The fast growth process of Si nanowires with dimensions below 10 nm holds promises in various applications in electronics, photovoltaics and atomic force microscopy. [GRAPHICS] (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：37 / 39

页数：3

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