Zero and controllable linewidth enhancement factor in p-doped 1.3 μm quantum dot lasers

被引：9

作者：

Alexander, Ryan R. ^{[1
]}

Childs, David ^{[1
]}

Agarwal, Harsh ^{[1
]}

Groom, Kristian M. ^{[1
]}

Liu, Hui Y. ^{[1
]}

Hopkinson, Mark ^{[1
]}

Hogg, Richard A. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

quantum dot; linewidth enhancement factor; 1.3 mu m;

D O I：

10.1143/JJAP.46.2421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effects of delta-p-doping on the operating characteristics of quantum dot (QD) lasers. It is well known that increasing delta-p-doping in a laser core increases both the internal loss and threshold current. For QD lasers however, it has the beneficial effects of increasing differential efficiency and saturated ground state gain. A further consequence of increased delta-p-doping is an ultra low linewidth enhancement factor (LEF) that can be tuned through zero and even made negative with increased doping at low injected current densities.

引用

页码：2421 / 2423

页数：3

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