Stimulated emission from free-standing GaN/Si micro-disk structures

被引:2
作者
Choi, H. W. [1 ]
Hui, K. N. [1 ]
Lai, P. T. [1 ]
Chen, P. [2 ]
Zhang, X. H. [2 ]
Teng, J. H. [2 ]
Tripathy, S. [2 ]
Chua, S. J. [2 ]
机构
[1] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期
关键词
D O I
10.1002/pssc.200674761
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Arrays of pivoted GaN microdisks have been fabricated on GaN/Si material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. The top and botton faces of the microdisks are optically smooth, suitable for forming optical cavities. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:2358 / +
页数:2
相关论文
共 10 条
[1]   Low-threshold lasing and purcell effect in microdisk lasers at room temperature [J].
Baba, T ;
Sano, D .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) :1340-1346
[2]   Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks [J].
Bethoux, JM ;
Vennéguès, P ;
Natali, F ;
Feltin, E ;
Tottereau, O ;
Nataf, G ;
De Mierry, P ;
Semond, F .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) :6499-6507
[3]   Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes [J].
Choi, HW ;
Jeon, CW ;
Dawson, MD ;
Edwards, PR ;
Martin, RW ;
Tripathy, S .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :5978-5982
[4]   Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector -: art. no. 081105 [J].
Kao, CC ;
Peng, YC ;
Yao, HH ;
Tsai, JY ;
Chang, YH ;
Chu, JT ;
Huang, HW ;
Kao, TT ;
Lu, TC ;
Kuo, HC ;
Wang, SC ;
Lin, CF .
APPLIED PHYSICS LETTERS, 2005, 87 (08)
[5]   CRYSTALLOGRAPHY OF EPITAXIAL-GROWTH OF WURTZITE-TYPE THIN-FILMS ON SAPPHIRE SUBSTRATES [J].
KUNG, P ;
SUN, CJ ;
SAXLER, A ;
OHSATO, H ;
RAZEGHI, M .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (09) :4515-4519
[6]   GAN GROWN ON HYDROGEN PLASMA CLEANED 6H-SIC SUBSTRATES [J].
LIN, ME ;
STRITE, S ;
AGARWAL, A ;
SALVADOR, A ;
ZHOU, GL ;
TERAGUCHI, N ;
ROCKETT, A ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1993, 62 (07) :702-704
[7]   Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback [J].
Martin, RW ;
Edwards, PR ;
Kim, HS ;
Kim, KS ;
Kim, T ;
Watson, IM ;
Dawson, MD ;
Cho, Y ;
Sands, T ;
Cheung, NW .
APPLIED PHYSICS LETTERS, 2001, 79 (19) :3029-3031
[8]   High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy [J].
Ng, HM ;
Moustakas, TD ;
Chu, SNG .
APPLIED PHYSICS LETTERS, 2000, 76 (20) :2818-2820
[9]   Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate [J].
Schulze, F ;
Dadgar, A ;
Bläsing, J ;
Diez, A ;
Krost, A .
APPLIED PHYSICS LETTERS, 2006, 88 (12)
[10]   Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching [J].
Sharma, R ;
Haberer, ED ;
Meier, C ;
Hu, EL ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 2005, 87 (05)