Dual-depletion-region electroabsorption modulator with evanescently coupled waveguide for high-speed (>40 GHz) and low driving-voltage performance

被引：10

作者：

Shi, J.-W. ^{[1
]}

Shiao, A.-C. ^{[1
]}

Chu, C.-C. ^{[1
]}

Wu, Y.-S. ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Tao Yuan 320, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2007年 / 19卷 / 5-8期

关键词：

electroabsorption modulators (EAMs); multiple quantum-well (MQW); optical communication;

D O I：

10.1109/LPT.2007.891637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a novel structure of a electroabsorption modulator (EAM) at a 1.55-mu m wavelength. By incorporating the epilayer structure of dual-depletion-region EAM with an evanescently coupled optical waveguide, the demonstrated device can achieve low electrical return loss (-20 dB at similar to 60 GHz), wide 3-dB bandwidth (60 GHz) of electrical transmission loss, wide electrical-to-optical bandwidth (45 GHz), and low 20-dB static driving voltage (V-20 (dB), 1.65 V) with extremely small polarization dependency. This new structure can not only achieve excellent figures-of-merit but release the burden imposed on downscaling the core width or length of high-speed/low driving-voltage EAM without using epitaxial regrowth or ion-implantation techniques to isolate the active and passive regions.

引用

页码：345 / 347

页数：3

共 14 条

[11] Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance [J].