4.2mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition

被引：0

作者：

Nishida, T ^{[1
]}

Takaya, M ^{[1
]}

Kakinuma, S ^{[1
]}

Kaneko, T ^{[1
]}

Shimoda, T ^{[1
]}

机构：

[1] Seiko Epson Corp, Nagano 3990293, Japan

来源：

2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2004年

关键词：

D O I：

10.1109/ISLC.2004.1382761

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We achieved high output power GaInNAs verticalcavity surface-emitting lasers (VCSELs) emitting at 1261.5nm. The continuous wave (CW) output power at room temperature reached to 4.2mW with the slope efficiency of 0.52W/A.

引用

页码：73 / 74

页数：2

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