Laser field effect on self-polarization of a donor impurity in a finite Ga1?xAlxAs/GaAs quantum well

The self-polarization and donor binding energy are calculated for a square Ga1?xAlxAs/GaAs quantum well under an laser field. The donor binding energy and self-polarization are obtained as a function of the laser field parameter, donor impurity position and quantum well-width. The calculations are made by means of variational and finite differences methods using the effective-mass approximation. Our results show that the laser field has remarkable effect on the self-polarization and donor binding energy. These results can be useful for studies on the electronic and optical properties of a quantum well under the influence of a laser field.