Laser field effect on self-polarization of a donor impurity in a finite Ga1?xAlxAs/GaAs quantum well

被引：5
作者：
Erdogan, I [1 ]
Yavuz, S. [1 ]
机构：
[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey
来源：
PHYSICA B-CONDENSED MATTER | 2021年 / 609卷
关键词：
Quantum we l l; Laser field; Donor impurity; Bind i n g energy; Self-polarization; Variational methods; BINDING-ENERGY; ELECTRIC-FIELD; HYDROSTATIC-PRESSURE; INTERSUBBAND TRANSITIONS; INTENSE; SQUARE; DOTS; WIRES; POLARIZABILITY; ABSORPTION;
D O I：
10.1016/j.physb.2020.412728
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The self-polarization and donor binding energy are calculated for a square Ga1?xAlxAs/GaAs quantum well under an laser field. The donor binding energy and self-polarization are obtained as a function of the laser field parameter, donor impurity position and quantum well-width. The calculations are made by means of variational and finite differences methods using the effective-mass approximation. Our results show that the laser field has remarkable effect on the self-polarization and donor binding energy. These results can be useful for studies on the electronic and optical properties of a quantum well under the influence of a laser field.
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页数：5
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