Bidirectional single-electron counting and the fluctuation theorem

被引:87
作者
Utsumi, Y. [1 ]
Golubev, D. S. [2 ]
Marthaler, M. [3 ,4 ]
Saito, K. [5 ]
Fujisawa, T. [6 ,7 ]
Schoen, Gerd [2 ,3 ,4 ]
机构
[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
[2] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany
[3] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany
[4] Univ Karlsruhe, DFG Ctr Funct Nanostruct CFN, D-76128 Karlsruhe, Germany
[5] Univ Tokyo, Grad Sch Sci, Tokyo 1130033, Japan
[6] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[7] Tokyo Inst Technol, Res Ctr Low Temp Phys, Meguro Ku, Tokyo 1528551, Japan
基金
日本科学技术振兴机构;
关键词
2ND LAW; VIOLATIONS;
D O I
10.1103/PhysRevB.81.125331
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the direction-resolved full counting statistics of single-electron tunneling through a double quantum-dot system and compare with predictions of the fluctuation theorem (FT) for Markovian stochastic processes. Experimental data obtained for GaAs/GaAlAs heterostructures appear to violate the FT. After analyzing various potential sources for the discrepancy we conclude that the nonequilibrium shot noise of the quantum point contact electrometer, which is used to study the transport, induces strong dot-level fluctuations which significantly influence the tunneling statistics. Taking these modifications into account we find consistency with the FT.
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页数:5
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