First-principles investigations of the dielectric properties of crystalline and amorphous Si3N4 thin films

被引：23

作者：

Pham, T. Anh ^{[1
]}

Li, Tianshu ^{[1
]}

Shankar, Sadasivan ^{[2
]}

Gygi, Francois ^{[3
,4
]}

Galli, Giulia ^{[1
,5
]}

机构：

[1] Univ Calif Davis, Dept Chem, Davis, CA 95616 USA

[2] Intel Corp, Santa Clara, CA USA

[3] Univ Calif Davis, Dept Appl Sci, Davis, CA 95616 USA

[4] Univ Calif Davis, Dept Comp Sci, Davis, CA 95616 USA

[5] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 06期

关键词：

ab initio calculations; amorphisation; density functional theory; dielectric thin films; optical constants; permittivity; silicon compounds; SILICON-NITRIDE; ELECTRONIC-STRUCTURE;

D O I：

10.1063/1.3303987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the dielectric properties of silicon nitride thin films with thickness below 6 nm, by using density functional theory calculations. We find a substantial decrease in the static dielectric constant of crystalline films, as their size is reduced. The variation in the response in proximity of the surface plays a key role in the observed decrease. In addition, amorphization of the films may bring further reduction of both the static and optical dielectric constants.

引用

页数：3

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