Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

被引：10

作者：

Gu Xiuquan ^{[1
]}

Zhu Liping ^{[1
]}

Ye Zhizhen ^{[1
]}

He Haiping ^{[1
]}

Zhao Binghui ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

RARE METALS | 2006年 / 25卷 / 30-35期

基金：

中国国家自然科学基金;

关键词：

Er3+ ions; ZnO; near-infrared photoemission; optical communication;

D O I：

10.1016/S1001-0521(08)60047-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Er doped ZnO thin films were grown on Si substrates using SiO2 buffer layer by pulsed laser deposition (PLD) method. The obtained films crystallize well and show high c-axis orientation. The Er content was evidently detected by the energy dispersive X-ray spectroscopy (EDS). Upon annealing in O-2 ambience at different temperatures, the films show different photoluminescence properties at 1.54 mu m. The samples annealed at 700 and 850 degrees C show intense photoluminescence peaks which enhance with the annealing temperature, while no obvious luminescence peaks are observed for the as-grown samples or annealed at 500 degrees C. The possible mechanism was discussed.

引用

页码：30 / 35

页数：6

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