Gas cluster ion beam irradiation for wafer bonding

被引：0

作者：

Toyoda, Noriaki ^{[1
]}

Sasaki, Tomoya ^{[1
]}

Ikcda, Shota ^{[1
]}

Yamada, Isao ^{[1
]}

机构：

[1] Univ Hyogo, Grad Sch Engn, 2167 Shosha, Himeji, Hyogo 6712280, Japan

来源：

2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Preliminary experiments of gas cluster ion beam (GCIB) irradiation for wafer bonding were conducted. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, will be beneficial for surface activated bonding. From XPS, AFM measurements, Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films efficiently without roughening. Cu-Cu bond increased with the acceleration voltage of Ar-GCIB. There is a correlation between the bond strength and the contact angle reduction due to surface smoothing and oxide removal by Ar-GCIB.

引用

页码：5 / 5

页数：1