A InGaP/GaAs HBT WLAN power amplifier with power detector

被引：0
|
作者：
Lee, KA [1 ]
Lee, DH [1 ]
Park, HM [1 ]
Cheon, SH [1 ]
Park, JW [1 ]
Yoo, HM [1 ]
Hong, S [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South Korea
来源：
34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two-stage InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WLAN 802.11b application. This is integrated with power detector that senses input power of power stage in order to decrease output power loss of detecting. The power amplifier delivers up to 26dBm output power with the maximum power-added efficiency (PAE) of 31% including consumption of the power detector under the supply voltage of 3.3V.
引用
收藏
页码：345 / 347
页数：3
相关论文
共 50 条
  • [31] Low power consumption InGaP/GaAs HBT MMIC power amplifier for 5-6 GHz wireless LAN terminals
    Kim, JH
    Kim, JH
    Noh, YS
    Park, CS
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2004, 58 (05) : 358 - 361
  • [32] InGaP/GaAs HBT Broadband Power Amplifier IC with 54.3% Fractional Bandwidth Based on Cascode Structure
    Lee, Wooseok
    Kang, Hyunuk
    Lee, Hwiseob
    Lim, Wonseob
    Bae, Jongseok
    Koo, Hyungmo
    Yoon, Jangsup
    Yang, Youngoo
    2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 1299 - 1302
  • [33] A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier
    Yang, SC
    Kuo, CW
    Chien, FT
    Chan, YJ
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 204 - 207
  • [34] A fully integrated GaAs HBT power amplifier with enhanced efficiency for 5-GHz WLAN applications
    Yang, Haohan
    You, Heng
    Qiao, Shushan
    IEICE ELECTRONICS EXPRESS, 2022, 19 (12):
  • [35] Broadband InGaP/GaAs HBT Power Amplifier Integrated Circuit Using Cascode Structure and Optimized Shunt Inductor
    Lee, Wooseok
    Kang, Hyunuk
    Leee, Hwiseob
    Lim, Wonseob
    Bae, Jongseok
    Koo, Hyungmo
    Yoon, Jangsup
    Hwang, Keum Cheol
    Lee, Kang-Yoon
    Yang, Youngoo
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (12) : 5090 - 5100
  • [36] Linearised InGaP/GaAs HBT MMIC power amplifier with active bias circuit for W-CDMA application
    Noh, YS
    Park, CS
    ELECTRONICS LETTERS, 2001, 37 (25) : 1523 - 1524
  • [37] Design of a Two Watt Power Amplifier in InGaP/GaAs HBT Process for Very High Linearity Wireless Applications
    Faiz, Mir
    Earles, Susan K.
    Hou, Bin
    Zhang, Shuyun
    2012 19th International Conference on Microwave Radar and Wireless Communications (MIKON), Vols 1 and 2, 2012, : 297 - 299
  • [38] A 50% efficiency InGaP/GaAs HBT power amplifier module for 1.95 GHz wide-band CDMA handsets
    Nishimura, TB
    Tanomura, M
    Azuma, K
    Nakai, K
    Hasegawa, Y
    Shimawaki, H
    2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2001, : 31 - 34
  • [39] A bias circuit for the thermal stability of GaAs HBT power amplifier
    Ma, Yuanbo
    Wu, Zhaohui
    Li, Bin
    Chen, Zhijian
    ELECTRONICS LETTERS, 2021, 57 (22) : 839 - 841
  • [40] GaAs HBT power amplifier with smooth gain control characteristics
    Jarvinen, E
    1998 IEEE RADIO AND WIRELESS CONFERENCE PROCEEDINGS - RAWCON 98, 1998, : 321 - 324
12345