A InGaP/GaAs HBT WLAN power amplifier with power detector

被引：0

作者：

Lee, KA ^{[1
]}

Lee, DH ^{[1
]}

Park, HM ^{[1
]}

Cheon, SH ^{[1
]}

Park, JW ^{[1
]}

Yoo, HM ^{[1
]}

Hong, S ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept EECS, Taejon 305701, South Korea

来源：

34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-stage InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WLAN 802.11b application. This is integrated with power detector that senses input power of power stage in order to decrease output power loss of detecting. The power amplifier delivers up to 26dBm output power with the maximum power-added efficiency (PAE) of 31% including consumption of the power detector under the supply voltage of 3.3V.

引用

页码：345 / 347

页数：3

共 6 条

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