Parameter extraction method using genetic algorithms for an improved OTFT compact model

被引：12
作者：
Moreno, P.
Picos, R. [1 ]
Roca, M.
Garcia-Moreno, E.
Inilguez, B. [2 ]
Estrada, M. [3 ]
机构：
[1] Univ Balearic Isl, E-07071 Palma de Mallorca, Spain
[2] Univ Rovirai Virgili, Tarragona, Spain
[3] INAOE, Mexico City, DF, Mexico
来源：
2007 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS | 2007年
关键词：
compact models; OTFTs; parameter extraction; genetic algorithm;
D O I：
10.1109/SCED.2007.383996
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an improved compact OTFT model extending previous models into the subthreshold regime is presented. Two parameter extraction techniques using genetic algorithms (queen-bee and crossing-mates) are considered in order to determine the values of the main model parameters. The model and parameter extraction procedures a re applied to a set of experimental measures in OTFTs from Infineon. Agreement between experimental and modelled DC IN characteristics is excellent with both extraction methods but crossing-mates algorithm is faster and its results are more independent of the initial conditions.
引用
收藏
页码：64 / +
页数：2
相关论文
共 14 条
[1]  
Aoyama K., 1995, Simulation of Semiconductor Devices and Processes. Vol.6, P118
[2]   A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling [J].
Benson, J ;
D'Halleweyn, NV ;
Redman-White, W ;
Easson, CA ;
Uren, MJ ;
Faynot, O ;
Pelloie, JL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (05) :1019-1021
[3]   AN EXPERIMENTAL-METHOD FOR THE DETERMINATION OF THE SATURATION POINT OF A MOSFET [J].
BOOTH, RVH ;
WHITE, MH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (01) :113-117
[4]   Accurate modeling and parameter extraction method for organic TFTs [J].
Estrada, A ;
Cerdeira, A ;
Puigdollers, J ;
Reséndiz, L ;
Pallares, J ;
Marsal, LF ;
Voz, C ;
Iñiguez, B .
SOLID-STATE ELECTRONICS, 2005, 49 (06) :1009-1016
[5]  
GOLDBERG DE, 1989, GENETC ALGORITHMS SE
[6]   SAPOSM - AN OPTIMIZATION METHOD APPLIED TO PARAMETER EXTRACTION OF MOSFET MODELS [J].
HU, YH ;
PAN, SW .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1993, 12 (10) :1481-1487
[7]   A NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFET [J].
JANG, WY ;
WU, CY ;
WU, HJ .
SOLID-STATE ELECTRONICS, 1988, 31 (09) :1421-1431
[8]   Queen-bee evolution for genetic algorithms [J].
Jung, SH .
ELECTRONICS LETTERS, 2003, 39 (06) :575-576
[9]   A review of recent MOSFET threshold voltage extraction methods [J].
Ortiz-Conde, A ;
Sánchez, FJG ;
Liou, JJ ;
Cerdeira, A ;
Estrada, M ;
Yue, Y .
MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) :583-596
[10]   An improved definition for modeling the threshold voltage of MOSFETs [J].
Ortiz-Conde, A ;
Rodriguez, J ;
Sanchez, FJG ;
Liou, JJ .
SOLID-STATE ELECTRONICS, 1998, 42 (09) :1743-1746
12