Investigation of ionoluminescence of semiconductor materials using helium ion microscopy

被引：8
作者：
Veligura, Vasilisa [1 ]
Hlawacek, Gregor [1 ,2 ]
van Gastel, Raoul [1 ]
Zandvliet, Harold J. W. [1 ]
Poelsema, Bene [1 ]
机构：
[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
[2] Rossendorf Inc, Helmholz Zentrum Dresden, Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
JOURNAL OF LUMINESCENCE | 2015年 / 157卷
关键词：
Ionoluminescence; Helium ion microscopy; Semiconductors; Nanowires; Quatum dots; FORMATION MECHANISM; DEFECTS; CATHODOLUMINESCENCE; GAP; NANOTUBES; GROWTH; LAYERS; FILMS;
D O I：
10.1016/j.jlumin.2014.09.016
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Helium ion microscopy has been employed to investigate the ionoluminescence of various semiconductors. We have verified the possibility of application of this technique for high-resolution ionoluminescence analysis of this kind of materials. In this work the ionoluminescence signal was induced by a sub-nanometer He+ beam with an energy of 35 keV. Several types of semiconductor samples were investigated: bulk materials, nanowires and quantum dots. All samples were found to exhibit ionoluminescence. However, the ionoluminescence signal rapidly degrades under the ion irradiation. The Signal degradation was found to depend not only on the sample's composition, but also on its size. The ionoluminescence emission spectra were recorded and emission peaks identified. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：321 / 326
页数：6
相关论文
共 42 条
  • [1] Crystal Structure Transfer in Core/Shell Nanowires
    Algra, Rienk E.
    Hocevar, Moira
    Verheijen, Marcel A.
    Zardo, Ilaria
    Immink, George G. W.
    van Enckevort, Willem J. P.
    Abstreiter, Gerhard
    Kouwenhoven, Leo P.
    Vlieg, Elias
    Bakkers, Erik P. A. M.
    [J]. NANO LETTERS, 2011, 11 (04) : 1690 - 1694
  • [2] Ionoluminescence in the Helium Ion Microscope
    Boden, Stuart A.
    Franklin, Thomas M. W.
    Scipioni, Larry
    Bagnall, Darren M.
    Rutt, Harvey N.
    [J]. MICROSCOPY AND MICROANALYSIS, 2012, 18 (06) : 1253 - 1262
  • [3] Interface study on heterostructured GaP-GaAs nanowires
    Borgstrom, Magnus T.
    Verheijen, Marcel A.
    Immink, George
    de Smet, Thierry
    Bakkers, Erik P. A. M.
    [J]. NANOTECHNOLOGY, 2006, 17 (16) : 4010 - 4013
  • [4] Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence
    Brown, SA
    Reeves, RJ
    Haase, CS
    Cheung, R
    Kirchner, C
    Kamp, M
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (21) : 3285 - 3287
  • [5] Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching
    Chanson, R.
    Martin, A.
    Avella, M.
    Jimenez, J.
    Pommereau, F.
    Landesman, J. P.
    Rhallabi, A.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (06) : 688 - 693
  • [6] Pit formation in GaInN quantum wells
    Chen, Y
    Takeuchi, T
    Amano, H
    Akasaki, I
    Yamano, N
    Kaneko, Y
    Wang, SY
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (06) : 710 - 712
  • [7] TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
    Cherkashin, NA
    Bert, NA
    Musikhin, YG
    Novikov, SV
    Cheng, TS
    Foxon, CT
    [J]. SEMICONDUCTORS, 2000, 34 (08) : 867 - 871
  • [8] Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
    Cho, HK
    Lee, JY
    Yang, GM
    Kim, CS
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (02) : 215 - 217
  • [9] Cathodoluminescence study of GaN epitaxial layers
    Cremades, A
    Piqueras, J
    Xavier, C
    Monteiro, T
    Pereira, E
    Meyer, BK
    Hofmann, DM
    Fischer, S
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3): : 230 - 234
  • [10] Franklin T.M.W., 2012, THESIS U SOUTHAMPTON
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