Investigation of ionoluminescence of semiconductor materials using helium ion microscopy

被引：8

作者：

Veligura, Vasilisa ^{[1
]}

Hlawacek, Gregor ^{[1
,2
]}

van Gastel, Raoul ^{[1
]}

Zandvliet, Harold J. W. ^{[1
]}

Poelsema, Bene ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] Rossendorf Inc, Helmholz Zentrum Dresden, Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

JOURNAL OF LUMINESCENCE | 2015年 / 157卷

关键词：

Ionoluminescence; Helium ion microscopy; Semiconductors; Nanowires; Quatum dots; FORMATION MECHANISM; DEFECTS; CATHODOLUMINESCENCE; GAP; NANOTUBES; GROWTH; LAYERS; FILMS;

D O I：

10.1016/j.jlumin.2014.09.016

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Helium ion microscopy has been employed to investigate the ionoluminescence of various semiconductors. We have verified the possibility of application of this technique for high-resolution ionoluminescence analysis of this kind of materials. In this work the ionoluminescence signal was induced by a sub-nanometer He+ beam with an energy of 35 keV. Several types of semiconductor samples were investigated: bulk materials, nanowires and quantum dots. All samples were found to exhibit ionoluminescence. However, the ionoluminescence signal rapidly degrades under the ion irradiation. The Signal degradation was found to depend not only on the sample's composition, but also on its size. The ionoluminescence emission spectra were recorded and emission peaks identified. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：321 / 326

页数：6

共 42 条

[1] Crystal Structure Transfer in Core/Shell Nanowires [J].

Algra, Rienk E. ;

Hocevar, Moira ;

Verheijen, Marcel A. ;

Zardo, Ilaria ;

Immink, George G. W. ;

van Enckevort, Willem J. P. ;

Abstreiter, Gerhard ;

Kouwenhoven, Leo P. ;

Vlieg, Elias ;

Bakkers, Erik P. A. M. .

NANO LETTERS, 2011, 11 (04) :1690-1694

[2] Ionoluminescence in the Helium Ion Microscope [J].

Boden, Stuart A. ;

Franklin, Thomas M. W. ;

Scipioni, Larry ;

Bagnall, Darren M. ;

Rutt, Harvey N. .

MICROSCOPY AND MICROANALYSIS, 2012, 18 (06) :1253-1262

[3] Interface study on heterostructured GaP-GaAs nanowires [J].

Borgstrom, Magnus T. ;

Verheijen, Marcel A. ;

Immink, George ;

de Smet, Thierry ;

Bakkers, Erik P. A. M. .

NANOTECHNOLOGY, 2006, 17 (16) :4010-4013

[4] Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence [J].

Brown, SA ;

Reeves, RJ ;

Haase, CS ;

Cheung, R ;

Kirchner, C ;

Kamp, M .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3285-3287

[5] Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching [J].

Chanson, R. ;

Martin, A. ;

Avella, M. ;

Jimenez, J. ;

Pommereau, F. ;

Landesman, J. P. ;

Rhallabi, A. .

JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (06) :688-693

[6] Pit formation in GaInN quantum wells [J].

Chen, Y ;

Takeuchi, T ;

Amano, H ;

Akasaki, I ;

Yamano, N ;

Kaneko, Y ;

Wang, SY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :710-712

[7] TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate [J].

Cherkashin, NA ;

Bert, NA ;

Musikhin, YG ;

Novikov, SV ;

Cheng, TS ;

Foxon, CT .

SEMICONDUCTORS, 2000, 34 (08) :867-871

[8] Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density [J].

Cho, HK ;

Lee, JY ;

Yang, GM ;

Kim, CS .

APPLIED PHYSICS LETTERS, 2001, 79 (02) :215-217

[9] Cathodoluminescence study of GaN epitaxial layers [J].

Cremades, A ;

Piqueras, J ;

Xavier, C ;

Monteiro, T ;

Pereira, E ;

Meyer, BK ;

Hofmann, DM ;

Fischer, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3) :230-234

[10]

Franklin T.M.W., 2012, THESIS U SOUTHAMPTON

← 1 2 3 4 5 →