Extreme ultraviolet lithography with table top lasers

被引：32
作者：
Marconi, M. C. [1 ,2 ]
Wachulak, P. W. [3 ]
机构：
[1] Colorado State Univ, NSF ERC Extreme Ultraviolet Sci & Technol, Ft Collins, CO 80523 USA
[2] Colorado State Univ, Dept Elect & Comp Engn, Ft Collins, CO 80523 USA
[3] Mil Univ Technol, Inst Optoelect, PL-00908 Warsaw, Poland
来源：
PROGRESS IN QUANTUM ELECTRONICS | 2010年 / 34卷 / 04期
基金：
美国国家科学基金会;
关键词：
Nanopatterning; Interferometric lithography; EUV lasers; X-RAY LASER; ENHANCED RAMAN-SCATTERING; ACHROMATIC INTERFEROMETRIC LITHOGRAPHY; AMPLITUDE DIVISION INTERFEROMETER; INTERFERENCE LITHOGRAPHY; IMPRINT LITHOGRAPHY; LARGE-AREA; IMMERSION; NM; BEAM;
D O I：
10.1016/j.pquantelec.2010.03.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Compact extreme ultraviolet (EUV) lasers with "table top" footprints which can be easily installed in a small laboratory environment, had enabled in the last years applications that so far had been restricted to large synchrotron facilities. The high brightness and degree of coherence of these laser sources make them a good alternative for applications where a coherent illumination is required. One of these applications is nano-photolithography realized by interferometric or "holographic" lithography. This paper describes the advances and capabilities of compact photolithographic systems based on "table top" EUV lasers. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：173 / 190
页数：18
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