Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

被引：12

作者：

Czaban, J. A. ^{[1
]}

Thompson, D. A. ^{[1
]}

Robinson, B. J. ^{[1
]}

机构：

[1] McMaster Univ, Ctr Emerging Dev Technol, Hamilton, ON L8S 4L7, Canada

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 04期

关键词：

D O I：

10.1088/0268-1242/22/4/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an order of magnitude increase in photoluminescence intensity as well as a large reduction of the mosaic spread and the overall tilt of the relaxed layers.

引用

页码：408 / 412

页数：5

共 22 条

[1] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].

AYERS, JE .

JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) :71-77

[2]

BOWEN DK, 1998, HIGH RESOLUTION XRAY, P55

[3] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[4] Influence of strain on semiconductor thin film epitaxy [J].

Fitzgerald, EA ;

Samavedam, SB ;

Xie, YH ;

Giovane, LM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :1048-1056

[5] ANISOTROPIC AND INHOMOGENEOUS STRAIN RELAXATION IN PSEUDOMORPHIC IN0.23GA0.77AS/GAAS QUANTUM WELLS [J].

GRUNDMANN, M ;

LIENERT, U ;

BIMBERG, D ;

FISCHERCOLBRIE, A ;

MILLER, JN .

APPLIED PHYSICS LETTERS, 1989, 55 (17) :1765-1767

[6] MISFIT DISLOCATIONS IN IN0.15GA0.85AS/GAAS STRAINED-LAYER SUPERLATTICES [J].

HERBEAUX, C ;

DIPERSIO, J ;

LEFEBVRE, A .

APPLIED PHYSICS LETTERS, 1989, 54 (11) :1004-1006

[7] HETEROEPITAXIAL GROWTH OF INP ON A GAAS SUBSTRATE BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].

HORIKAWA, H ;

OGAWA, Y ;

KAWAI, Y ;

SAKUTA, M .

APPLIED PHYSICS LETTERS, 1988, 53 (05) :397-399

[8] Comparison of mixed anion, InAsyP1-y and mixed cation, InxAl1-xAs metamorphic buffers grown by molecular beam epitaxy on (100)InP substrates [J].

Hudait, MK ;

Lin, Y ;

Palmisiano, MN ;

Tivarus, C ;

Pelz, JP ;

Ringel, SA .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) :3952-3960

[9] MISFIT DISLOCATIONS IN LATTICE-MISMATCHED EPITAXIAL-FILMS [J].

HULL, R ;

BEAN, JC .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1992, 17 (06) :507-546

[10] New virtual substrate concept for vertical MOS transistors [J].

Kasper, E ;

Lyutovich, K ;

Bauer, M ;

Oehme, M .

THIN SOLID FILMS, 1998, 336 (1-2) :319-322

← 1 2 3 →