Amorphization kinetics of Ge2Sb2Te5 thin film induced by ion implantation

被引：4
|
作者：
De Bastiani, R.
Piro, A. M.
Grimaldi, M. G.
Rimini, E.
机构：
[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[2] CNR, INFM, MATIS, IMM, I-95121 Catania, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷 / 572-576期
关键词：
chalcogenides; RBS; ion irradiation; reflectivity; energy loss;
D O I：
10.1016/j.nimb.2007.01.106
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
GST chalcogenides based alloys are considered as one of the main candidates for the development of non-volatile memories innovative technologies. In particular, the switching behaviour between crystalline and amorphous phases of Ge2Sb2Te5 has been attracted much interest for commercial use applications. In this work the amorphization kinetics of Ge2Sb2Te5 during ion irradiation are examined. We reported relevant experimental observations concerning the kinetics of order-disorder phase transition related to the ion beam induced amorphization in GST layer and the models to describe the process. The relationship between the phase transition and reflectivity variation of crystalline Ge2Sb2Te5 films after bombardment with Ar+ ions is investigated with particular emphasis on the effects of ion energy, fluence and implant temperature. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：572 / 576
页数：5
相关论文
共 50 条
  • [21] Characteristics at high electric fields in amorphous Ge2Sb2Te5 films
    Gotoh, Tamihiro
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2728 - 2731
  • [22] Microstructural failure in Ge2Sb2Te5 phase change memory cell
    Kim, Yong Tae
    Kim, Young Hwan
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (02): : 435 - 438
  • [23] Ab initio study of antisite defective layered Ge2Sb2Te5
    Zhou, Jian
    Sun, Zhimei
    Pan, Yuanchun
    Song, Zhitang
    Ahuja, Rajeev
    MATERIALS CHEMISTRY AND PHYSICS, 2012, 133 (01) : 159 - 162
  • [24] EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5
    Paesler, M. A.
    Baker, D. A.
    Lucovsky, G.
    Edwards, A. E.
    Taylor, P. C.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) : 873 - 877
  • [25] Single Pulse Laser-Induced Phase Transitions of PLD-Deposited Ge2Sb2Te5 Films
    Lu, Hongbing
    Thelander, Erik
    Gerlach, Juergen W.
    Decker, Ulrich
    Zhu, Benpeng
    Rauschenbach, Bernd
    ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (29) : 3621 - 3627
  • [26] Compatibility study of Ti and Ge2Sb2Te5 for phase-change memory applications
    Venugopal, V. A.
    Ottaviani, G.
    Tonini, R.
    Bersani, M.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2012, 167 (07): : 487 - 495
  • [27] Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials
    Andrikopoulos, K. S.
    Yannopoulos, S. N.
    Kolobov, A. V.
    Fons, P.
    Tominaga, J.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) : 1074 - 1078
  • [28] Theoretical Investigation of Sn-Doped Ge2Sb2Te5 Alloy in Crystalline Phase
    Singh, Janpreet
    Singh, Gurinder
    Kaura, Aman
    Tripathi, S. K.
    PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665
  • [29] Ab initio computer simulations of non-equilibrium radiation-induced cascades in amorphous Ge2Sb2Te5
    Konstantinou, K.
    Mocanu, F. C.
    Lee, T. H.
    Elliott, S. R.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 30 (45)
  • [30] Synthesis of phase-change material Ge2Sb2Te5 nanoparticles by laser-induced forward transfer techniques
    Burtsev, A. A.
    Mikhalevsky, V. A.
    Nevzorov, A. A.
    Kiselev, A. V.
    Konnikova, M. R.
    Ionin, V. V.
    Eliseev, N. N.
    Lotin, A. A.
    PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS, 2024, (16) : 612 - 620
12345