Amorphization kinetics of Ge2Sb2Te5 thin film induced by ion implantation

被引：4
作者：
De Bastiani, R.
Piro, A. M.
Grimaldi, M. G.
Rimini, E.
机构：
[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[2] CNR, INFM, MATIS, IMM, I-95121 Catania, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷 / 572-576期
关键词：
chalcogenides; RBS; ion irradiation; reflectivity; energy loss;
D O I：
10.1016/j.nimb.2007.01.106
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
GST chalcogenides based alloys are considered as one of the main candidates for the development of non-volatile memories innovative technologies. In particular, the switching behaviour between crystalline and amorphous phases of Ge2Sb2Te5 has been attracted much interest for commercial use applications. In this work the amorphization kinetics of Ge2Sb2Te5 during ion irradiation are examined. We reported relevant experimental observations concerning the kinetics of order-disorder phase transition related to the ion beam induced amorphization in GST layer and the models to describe the process. The relationship between the phase transition and reflectivity variation of crystalline Ge2Sb2Te5 films after bombardment with Ar+ ions is investigated with particular emphasis on the effects of ion energy, fluence and implant temperature. (c) 2007 Elsevier B.V. All rights reserved.
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收藏
页码：572 / 576
页数：5
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