Tuning, optimization, and perovskite solar cell device integration of ultrathin poly(3,4-ethylene dioxythiophene) films via a single-step all-dry process

被引:73
作者
Gharahcheshmeh, Meysam Heydari [1 ]
Tavakoli, Mohammad Mahdi [2 ]
Gleason, Edward F. [1 ]
Robinson, Maxwell T. [1 ]
Kong, Jing [2 ]
Gleason, Karen K. [1 ]
机构
[1] MIT, Dept Chem Engn, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA
关键词
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; CHARGE-TRANSPORT; POLYMER; OCVD; GENERATION; CONDUCTION; CHEMISTRY;
D O I
10.1126/sciadv.aay0414
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
For semicrystalline poly(3,4-ethylene dioxythiophene) (PEDOT), oxidative chemical vapor deposition (oCVD) enables systematic control over the b-axis lattice parameter (pi-pi stacking distance). Decreasing the b-axis lattice parameter increases the charge transfer integral, thus enhancing intracrystallite mobility. To reduce the barrier to intercrystallite transport, oCVD conditions were tailored to produce pure face-on crystallite orientation rather than the more common edge-on orientation. The face-on oriented oCVD PEDOT with the lowest b-axis lattice parameter displayed the highest in-plane electrical conductivity ( sigma(dc) = 2800 S/cm), largest optical bandgap (2.9 eV), and lowest degree of disorder as characterized by the Urbach band edge energy. With the single step oCVD process at growth conditions compatible with direct deposition onto flexible plastic substrates, the ratio sigma(dc)/sigma(op) reached 50. As compared to spun- cast PEDOT:polystyrene sulfonate, integration of oCVD PEDOT as a hole transport layer (HTL) improved both the power conversion efficiency (PCE) and shelf-life stability of inverted perovskite solar cells (PSC).
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页数:12
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