Mechanical properties of hydrogenated nanocrystalline silicon thin film studied by finite element method

被引：0
作者：
Wang, X. [1 ]
Wang, J. [1 ]
Yang, S. [2 ]
机构：
[1] Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China
[2] Beihang Univ, Sch Transportat Sci & Engn, Internal Combust Engine Engn Dept, Beijing 100191, Peoples R China
来源：
MATERIALS RESEARCH INNOVATIONS | 2014年 / 18卷
关键词：
Finite element method; Mechanical properties; Hydrogenated nanocrystalline silicon thin; CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; SOLAR-CELLS; NANOINDENTATION; SIMULATION; LAYER;
D O I：
10.1179/1432891714Z.000000000871
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this research, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by using plasma enhanced chemical vapour deposition system. The finite element model of nanoindentation was established to simulate the mechanical properties of a nc-Si: H thin film. By comparing numerical simulation data with experimental data, the correctness of the model was validated. The mechanical properties of nc-Si: H thin films obtained were: Young's modulus of 45 GPa, yield stress of 4.5 MPa, Poisson's ratio of 0.3 and the hardness was calculated to be 2.5 GPa.
引用
收藏
页码：1017 / 1020
页数：4
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