The Low-Temperature Seebeck Coefficient in Insulators

被引：8
作者：
Mahan, G. D. [1 ]
机构：
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 01期
关键词：
Seebeck coefficient; thermoelectrics; variable-range hopping; PHONON-DRAG; THERMOELECTRIC-POWER; IMPURITY CONDUCTION; SPIN CALORITRONICS; ELECTRON MOBILITY; SEMICONDUCTORS; GAP; GE;
D O I：
10.1007/s11664-014-3492-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show the existence of a space-charge effect in the measurement of the low-temperature Seebeck coefficient in insulators. The Seebeck coefficient S(T) is obtained by measurement of the voltage DV due to a temperature gradient (Delta T, S = -Delta V/Delta T). The space-charge effect makes the voltage go to zero in insulators, even if the Seebeck coefficient does not vanish. We propose that the Seebeck coefficient does not actually vanish in insulators, contrary to common belief. We also propose that variable-range hopping is not observed in conductivity measurements.
引用
收藏
页码：431 / 434
页数：4
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