High quality PdTe2 thin films grown by molecular beam epitaxy

被引：47

作者：

Li, En ^{[1
,2
]}

Zhang, Rui-Zi ^{[1
,2
]}

Li, Hang ^{[1
,2
]}

Liu, Chen ^{[3
]}

Li, Geng ^{[1
,2
]}

Wang, Jia-Ou ^{[3
]}

Qian, Tian ^{[1
,2
]}

Ding, Hong ^{[1
,2
]}

Zhang, Yu-Yang ^{[1
,2
]}

Du, Shi-Xuan ^{[1
,2
]}

Lin, Xiao ^{[1
,2
]}

Gao, Hong-Jun ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Univ Chinese Acad Sci, Beijing 100190, Peoples R China

[3] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS B | 2018年 / 27卷 / 08期

基金：

中国国家自然科学基金;

关键词：

two-dimensional materials; transition-metal dichalcogenides; PdTe2; molecular beam epitaxy; TRANSITION-METAL-DICHALCOGENIDE; SUPERCONDUCTIVITY; MINERALS; TE;

D O I：

10.1088/1674-1056/27/8/086804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

PdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform to explore the interplay between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC(0001) by molecular beam epitaxy (MBE). Atomically thin films are characterized by scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and Raman spectroscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy (ARPES). Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.

引用

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