Heterostructure optoelectronic switch with light controllable S-shaped negative differential resistance

被引：3
作者：
Guo, DF [1 ]
机构：
[1] Chinese AF Acad, Dept Elect Engn, Kaohsiung, Taiwan
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 09期
关键词：
D O I：
10.1063/1.120949
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A heterostructure optoelectronic switch, grown by molecular beam epitaxy, has been fabricated. Owing to the carrier confinement and avalanche multiplication in the transport mechanism, S-shaped negative-differential-resistance performances are observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the potential barrier height and breakdown voltage controllable by incident light. The dependence of the I-V characteristics on illumination is attributed to the carrier confinement effect in the device operation. (C) 1998 American Institute of Physics.
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页码：1010 / 1012
页数：3
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