Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

被引：75
|
作者：
Shah, V. A. [1 ]
Dobbie, A. [1 ]
Myronov, M. [1 ]
Leadley, D. R. [1 ]
机构：
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 06期
基金：
英国工程与自然科学研究理事会;
关键词：
buffer layers; chemical vapour deposition; dislocation density; elemental semiconductors; germanium; Ge-Si alloys; silicon; substrates; surface roughness; THREADING-DISLOCATION DENSITIES; CHEMICAL-VAPOR-DEPOSITION; SI/SIGE HETEROSTRUCTURES; SURFACE-MORPHOLOGY; STRAIN RELAXATION; EPITAXIAL-GROWTH; SI; GE; LAYERS; GERMANIUM;
D O I：
10.1063/1.3311556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of compositional grading rate on reverse linear graded silicon germanium virtual substrates, grown by reduced pressure chemical vapor deposition, is investigated. For a Si(001)/Ge/RLG/Si(0.22)Ge(0.78) buffer of 2.4 mu m total thickness the threading dislocation density (TDD) within the top, fully relaxed, Si(0.22)Ge(0.78) layer is 4x10(6) cm(-2), with a surface roughness of 3 nm. For a thicker buffer, where the grading rate is reduced, a lower TDD of 3x10(6) cm(-2) and a surface roughness of 2 nm can be achieved. The characteristics of reverse graded Si(0.22)Ge(0.78) virtual substrates are shown to be comparable to, or exceed, conventional buffer techniques, leading to thinner high-quality high Ge composition SiGe virtual substrates.
引用
收藏
页数：11
相关论文
共 50 条
  • [41] Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy
    Ali, Dyan
    Richardson, Christopher J. K.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (06):
  • [42] Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies
    Loo, R.
    Porret, C.
    Han, H.
    Srinivasan, A.
    Vecchio, E.
    Depauw, V
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (08)
  • [43] Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V/c-Si tandem solar cells
    Ghosh, Monalisa
    Bulkin, Pavel
    Silva, Francois
    Johnson, Erik, V
    Florea, Ileana
    Funes-Hernando, Daniel
    Tanguy, Alexandre
    Renard, Charles
    Vaissiere, Nicolas
    Decobert, Jean
    Garcia, Ivan
    Rey-Stolle, Ignacio
    Cabarrocas, Pere Roca, I
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2022, 236
  • [44] High germanium content SiGe virtual substrates grown at high temperatures
    Bogumilowicz, Y
    Hartmann, JM
    Laugier, F
    Rolland, G
    Billon, T
    Cherkashin, N
    Claverie, A
    JOURNAL OF CRYSTAL GROWTH, 2005, 283 (3-4) : 346 - 355
  • [45] Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates
    Burrows, Christopher W.
    Dobbie, Andrew
    Myronov, Maksym
    Hase, Thomas P. A.
    Wilkins, Stuart B.
    Walker, Marc
    Mudd, James J.
    Maskery, Ian
    Lees, Martin R.
    McConville, Christopher F.
    Leadley, David R.
    Bell, Gavin R.
    CRYSTAL GROWTH & DESIGN, 2013, 13 (11) : 4923 - 4929
  • [46] Defects in SiGe virtual substrates for high mobility electron gas
    Di Gaspare, L
    Fiorini, P
    Scappucci, G
    Evangelisti, F
    Palange, E
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 36 - 40
  • [47] Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates
    Arimoto, Keisuke
    Watanabe, Masato
    Yamanaka, Junji
    Nakagawa, Kiyokazu
    Sawano, Kentarou
    Shiraki, Yasuhiro
    Usami, Noritaka
    Nakajima, Kazuo
    SOLID-STATE ELECTRONICS, 2009, 53 (10) : 1135 - 1143
  • [48] Lattice-Matched GaP/SiGe Virtual Substrates for Low-Dislocation Density GaInP/GaAsP/Si Solar Cells
    Carlin, Andrew M.
    Grassman, Tyler J.
    Brenner, Mark R.
    Grandal, Javier
    Ratcliff, Chris
    Yang, Limei
    Mills, Michael
    Sharma, Prithu
    Fitzgerald, Eugene A.
    Ringel, Steven A.
    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 918 - 921
  • [49] Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates
    He, Yang
    Sun, Yurun
    Song, Yan
    Zhao, Yongming
    Yu, Shuzhen
    Dong, Jianrong
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)
  • [50] Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates
    Van Elshocht, S.
    Caymax, M.
    Conard, T.
    De Gendt, S.
    Hoflijk, I.
    Houssa, M.
    Leys, F.
    Bonzom, R.
    De Jaeger, B.
    Van Steenbergen, J.
    Vandervorst, W.
    Heyns, M.
    Meuris, M.
    THIN SOLID FILMS, 2006, 508 (1-2) : 1 - 5
12345