Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

被引：75
|
作者：
Shah, V. A. [1 ]
Dobbie, A. [1 ]
Myronov, M. [1 ]
Leadley, D. R. [1 ]
机构：
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 06期
基金：
英国工程与自然科学研究理事会;
关键词：
buffer layers; chemical vapour deposition; dislocation density; elemental semiconductors; germanium; Ge-Si alloys; silicon; substrates; surface roughness; THREADING-DISLOCATION DENSITIES; CHEMICAL-VAPOR-DEPOSITION; SI/SIGE HETEROSTRUCTURES; SURFACE-MORPHOLOGY; STRAIN RELAXATION; EPITAXIAL-GROWTH; SI; GE; LAYERS; GERMANIUM;
D O I：
10.1063/1.3311556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of compositional grading rate on reverse linear graded silicon germanium virtual substrates, grown by reduced pressure chemical vapor deposition, is investigated. For a Si(001)/Ge/RLG/Si(0.22)Ge(0.78) buffer of 2.4 mu m total thickness the threading dislocation density (TDD) within the top, fully relaxed, Si(0.22)Ge(0.78) layer is 4x10(6) cm(-2), with a surface roughness of 3 nm. For a thicker buffer, where the grading rate is reduced, a lower TDD of 3x10(6) cm(-2) and a surface roughness of 2 nm can be achieved. The characteristics of reverse graded Si(0.22)Ge(0.78) virtual substrates are shown to be comparable to, or exceed, conventional buffer techniques, leading to thinner high-quality high Ge composition SiGe virtual substrates.
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页数：11
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