Surface functionalization of penta-siligraphene monolayer for nanoelectronic, optoelectronic and photocatalytic water-splitting: A first-principles study

被引:24
作者
Maymoun, M. [1 ]
Oukahou, S. [1 ]
Elomrani, A. [1 ]
Lamhani, M. [1 ]
Bahou, Y. [1 ]
机构
[1] Sultan Moulay Slimane Univ Beni Mellal, Polydisciplinary Fac Khouribga, LS2ME Lab, BP 145, Khouribga 25000, Morocco
关键词
Density functional theory (DFT); 2D-materials; Surface functionalization; Photocatalytic; Penta-siligraphene; IMPRINTED ELECTROCHEMICAL SENSOR; MECHANICAL-PROPERTIES; OPTICAL-PROPERTIES; MAGNETIC-PROPERTIES; GRAPHENE; STRAIN; PERFORMANCE; HYDROGENATION; NANOPARTICLES; SE;
D O I
10.1016/j.apsusc.2022.152972
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Herein, we have investigated theoretically using density functional theory the effect of surface functionalization with hydrogen, fluorine and chlorine atoms on electronic and optic properties of the penta-siligraphene monolayer (p-Si2C4). By assessing the stability, we have found that the hydrogenated p-Si2C4 monolayer (p-Si2C4-4H) is energetically (negative formation energy), dynamically (absence of soft modes) and thermally (small drift in the total energy at standard temperature) stable. The electronic-property analysis revealed that the p-Si2C4-4H monolayer is a semiconductor with indirect bandgap varying from 2.06 to 3.41 eV depending on the used functional. Moreover, the p-Si2C4-4H monolayer exhibits a considerable absorption in the ultra-violet (UV) region and a negligible amount of absorption in the visible region. Interestingly, the band edge positions of the p-Si2C4-4H monolayer could perfectly satisfy the redox potentials of photocatalytic water splitting. Furthermore, we have found that bandgap of p-Si2C4-4H monolayer can be tuned using biaxial strain. While, according to HSE06 functional, the bandgap decreases from 3.01 (0%) to 2.38 eV (at 5% biaxial strain) corresponding to a good fitting of band edge with redox potentials and an enhancement in the optical absorption in visible-UV region. This Leads to an improvement the photocatalytic performance of p-Si2C4-4H. Our findings suggest the p-Si2C4-4H monolayer as a promising candidate for applications in new generation of nano- and opto-electronics, especially in UV light shielding (for absorbing the harmful-UV radiations), solar cells (as an anti-reflection layers) and photocatalytic water splitting (for hydrogen and oxygen production).
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页数:9
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